Lowering Melting Points of Ruthenium(III) Complexes as Precursors for Metalorganic Chemical Vapor Deposition.
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منابع مشابه
Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride
The metalorganic chemical vapor deposition of In0.06Ga0.94As1 xNx, with x 1⁄4 0.00–0.02, has been examined using nitrogen trifluoride (NF3) and tertiarybutylarsine. The solid N/V ratio increased linearly with the gas-phase N/V ratio up to a limit of 2.0% nitrogen in the film at a gas N/V 1⁄4 0.35. No further increase in nitrogen content could be achieved at a growth temperature of 550 1C unless...
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ژورنال
عنوان ژورنال: NIPPON KAGAKU KAISHI
سال: 1997
ISSN: 2185-0925,0369-4577
DOI: 10.1246/nikkashi.1997.648